[L-1-5] Effect of Thermal Stress on a N-related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy

B. Bouzazi¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Tech. Inst. , Japan)

https://doi.org/10.7567/SSDM.2011.L-1-5