Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers

W. Du; T. Saito; M. A. Khan; K. Nakamura; M. Baba; K. Toh; K. Toko; N. Usami; T. Suemasu

doi:https://doi.org/10.7567/SSDM.2011.L-3-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n⁺-BaSi₂/p⁺-Si Tunnel Junction to Undoped BaSi₂ Overlayers

W. Du¹、T. Saito¹、M. A. Khan¹、K. Nakamura¹、M. Baba¹、K. Toh¹、K. Toko¹、N. Usami^2,3、T. Suemasu^1,3 (1.Univ. of Tsukuba、2.Tohoku Univ.、3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.L-3-3

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2011 International Conference on Solid State Devices and Materials

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n⁺-BaSi₂/p⁺-Si Tunnel Junction to Undoped BaSi₂ Overlayers