Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers

W. Du; T. Saito; M. A. Khan; K. Nakamura; M. Baba; K. Toh; K. Toko; N. Usami; T. Suemasu

doi:https://doi.org/10.7567/SSDM.2011.L-3-3

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n⁺-BaSi₂/p⁺-Si Tunnel Junction to Undoped BaSi₂ Overlayers

W. Du¹, T. Saito¹, M. A. Khan¹, K. Nakamura¹, M. Baba¹, K. Toh¹, K. Toko¹, N. Usami^2,3, T. Suemasu^1,3 (1.Univ. of Tsukuba, 2.Tohoku Univ., 3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.L-3-3

2011 International Conference on Solid State Devices and Materials

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers

[L-3-3] Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n⁺-BaSi₂/p⁺-Si Tunnel Junction to Undoped BaSi₂ Overlayers