Annealing of the BaSi<sub>2</sub> Epitaxial Films Implanted with BF<sub>2</sub> Ions

K. O. Hara; N. Usami; Y. Hoshi; Y. Shiraki; M. Suzuno; K. Toko; T. Suemasu

doi:https://doi.org/10.7567/SSDM.2011.L-3-4

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[L-3-4] Annealing of the BaSi₂ Epitaxial Films Implanted with BF₂ Ions

K. O. Hara^1,4、N. Usami^1,4、Y. Hoshi²、Y. Shiraki²、M. Suzuno³、K. Toko^3,4、T. Suemasu^3,4 (1.Tohoku Univ.、2.Tokyo City Univ.、3.Univ. of Tsukuba、4.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.L-3-4

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2011 International Conference on Solid State Devices and Materials

[L-3-4] Annealing of the BaSi2 Epitaxial Films Implanted with BF2 Ions

[L-3-4] Annealing of the BaSi₂ Epitaxial Films Implanted with BF₂ Ions