[M-1-5] Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC (000-1) Substrate by Molecular-Beam Epitaxy

H. Okumura¹、T. Kimoto¹、J. Suda¹ (1.Kyoto Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.M-1-5