[M-2-3] Processing Induced Pre-Existing Vacated (Empty) O-atom Defect Sites in Remote Plasma Deposited GeO2 and SiO2 Gate Dielectrics
G. Lucovsky1、J. Kim1、K. Wu1、D. Zeller1、B. Papas1、J. L. Whitten1
(1.North Carolina State Univ. , USA)
https://doi.org/10.7567/SSDM.2011.M-2-3