The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[M-2-3] Processing Induced Pre-Existing Vacated (Empty) O-atom Defect Sites in Remote Plasma Deposited GeO2 and SiO2 Gate Dielectrics

G. Lucovsky1, J. Kim1, K. Wu1, D. Zeller1, B. Papas1, J. L. Whitten1 (1.North Carolina State Univ. , USA)

https://doi.org/10.7567/SSDM.2011.M-2-3