[M-8-6] Precise thickness and strain control during epitaxial growth of strained Ge/SiGe multilayers by industrial class CVD M. Myronov1、X. C. Liu1、A. Dobbie1、D. R. Leadley1 (1.Univ. of Warwick , UK) https://doi.org/10.7567/SSDM.2011.M-8-6