[M-8-6] Precise thickness and strain control during epitaxial growth of strained Ge/SiGe multilayers by industrial class CVD

M. Myronov¹, X. C. Liu¹, A. Dobbie¹, D. R. Leadley¹ (1.Univ. of Warwick , UK)

https://doi.org/10.7567/SSDM.2011.M-8-6