Boron and Carbon co-doping in high percentage Silicon-Germanium Alloys - Effects of Dopant Incorporation, Strain Compensation and Microstructure -

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

A. Reznicek¹、T. Adam¹、Z. Zhu¹、J. Li¹、R. Murphy¹、S. W. Bedell¹、V. Paruchuri¹、D. K. Sadana¹ (1.IBM , USA)