Boron and Carbon co-doping in high percentage Silicon-Germanium Alloys - Effects of Dopant Incorporation, Strain Compensation and Microstructure -

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

A. Reznicek¹, T. Adam¹, Z. Zhu¹, J. Li¹, R. Murphy¹, S. W. Bedell¹, V. Paruchuri¹, D. K. Sadana¹ (1.IBM , USA)