[N-6-2] Magnetoresistance Effect in Current-Perpendicular-to-Plane Magnetoresistive Devices using Co2FexMn1-xSi Heusler Alloy M. Oogane1, J. Sato1, H. Naganuma1, Y. Ando1 (1.Tohoku Univ. , Japan) https://doi.org/10.7567/SSDM.2011.N-6-2