Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles

J. Kanehara; Y. Miyata; H. Nohira; Y. Izumi; T. Muro; T. Kinoshita; P. Ahmet; K. Kakushima; K. Tsutsui; T. Hattori; H. Iwai

doi:https://doi.org/10.7567/SSDM.2011.P-1-11

[P-1-11] Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles

J. Kanehara¹、Y. Miyata¹、H. Nohira²、Y. Izumi³、T. Muro³、T. Kinoshita³、P. Ahmet¹、K. Kakushima¹、K. Tsutsui¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech、2.Tokyo City Univ.、3.JASRI/Spring-8 , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-11

2011 International Conference on Solid State Devices and Materials

[P-1-11] Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles