[P-1-20L] Novel Gadolinium Oxide Nanocrystals with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layers
C. T. Lin1、J. C. Wang1、C. H. Chen1、P. W. Huang1、C. S. Lai1
(1.Chang Gung Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2011.P-1-20L