[P-1-5] Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H₂-Annealing

M. Adachi¹、Y. Shimura¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-5