The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-1-8] Clear Difference between Chemical Structure of SiO2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules

T. Suwa1, Y. Kumagai1, A. Teramoto1, T. Muro2, T. Kinoshita2, S. Sugawa1, T. Hattori1, T. Ohmi1 (1.Tohoku Univ., 2.JASRI , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-8