The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日 〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-1-8] Clear Difference between Chemical Structure of SiO2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules

T. Suwa1、Y. Kumagai1、A. Teramoto1、T. Muro2、T. Kinoshita2、S. Sugawa1、T. Hattori1、T. Ohmi1 (1.Tohoku Univ.、2.JASRI , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-8