Acceleration Sensor Based on CMOS Inverter Having Force Balanced Movable Gate Electrode

M. Suzuki; J. Kogure; K. Kitamura; T. Takahashi; S. Yokoyama; H. Tokunaga; S. Aoyagi

doi:https://doi.org/10.7567/SSDM.2011.P-11-9

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-11-9] Acceleration Sensor Based on CMOS Inverter Having Force Balanced Movable Gate Electrode

M. Suzuki¹, J. Kogure¹, K. Kitamura¹, T. Takahashi¹, S. Yokoyama², H. Tokunaga³, S. Aoyagi¹ (1.Kansai Univ., 2.Hiroshima Univ., 3.M. T. C. Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.P-11-9

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