[P-12-8] Formation of Nitrogen Vacancy Adjoining to Gd Ion Doped in GaN

D. Abe¹, K. Higashi¹, S. Emura¹, Y. K. Zhou¹, S. Hasegawa¹, H. Asahi¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-12-8