[P-12-8] Formation of Nitrogen Vacancy Adjoining to Gd Ion Doped in GaN

D. Abe¹、K. Higashi¹、S. Emura¹、Y. K. Zhou¹、S. Hasegawa¹、H. Asahi¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-12-8