[P-13-16] Ballistic Current Model for Graphene Nanoribbon Field-Effect Transistors

Y. Li¹、Y. Zhang¹、F. Liu¹、Y. Yang¹、Y. Wang¹、X. Liu¹ (1.Peking Univ. , China)

https://doi.org/10.7567/SSDM.2011.P-13-16