[P-13-16] Ballistic Current Model for Graphene Nanoribbon Field-Effect Transistors

Y. Li¹, Y. Zhang¹, F. Liu¹, Y. Yang¹, Y. Wang¹, X. Liu¹ (1.Peking Univ. , China)

https://doi.org/10.7567/SSDM.2011.P-13-16