[P-14-1] Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

H. Lee^1,5, N. Sawamoto^1,5, T. Tachibana^1,5, N. Ikeno^1,5, K. Arafune^2,5, H. Yoshida^2,5, S. Satoh^2,5, K. Matsumoto³, K. Takahashi³, T. Chikyow⁴, A. Ogura^1,5 (1.Meiji Univ., 2.Univ. of Hyogo, 3.Tokyo Electron Ltd., 4.NIMS, 5.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.P-14-1