[P-14-1] Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

H. Lee^1,5、N. Sawamoto^1,5、T. Tachibana^1,5、N. Ikeno^1,5、K. Arafune^2,5、H. Yoshida^2,5、S. Satoh^2,5、K. Matsumoto³、K. Takahashi³、T. Chikyow⁴、A. Ogura^1,5 (1.Meiji Univ.、2.Univ. of Hyogo、3.Tokyo Electron Ltd.、4.NIMS、5.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.P-14-1