The Japan Society of Applied Physics

[P-14-1] Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

H. Lee1,5、N. Sawamoto1,5、T. Tachibana1,5、N. Ikeno1,5、K. Arafune2,5、H. Yoshida2,5、S. Satoh2,5、K. Matsumoto3、K. Takahashi3、T. Chikyow4、A. Ogura1,5 (1.Meiji Univ.、2.Univ. of Hyogo、3.Tokyo Electron Ltd.、4.NIMS、5.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.P-14-1