Current Transport Characteristics of Quasi-Al<sub>x</sub>Ga<sub>1-x</sub>N/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

T. Okuda¹, H. Miyake¹, T. Kimoto¹, J. Suda¹ (1.Kyoto Univ. , Japan)