Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlO<sub>x</sub>

K. Arafune; S. Miki; R. Matsutani; J. Hamano; H. Yoshida; T. Tachibana; A. Ogura; K. Matsumoto; K. Takahashi; Y. Ohshita; S. Satoh

doi:https://doi.org/10.7567/SSDM.2011.P-14-2

[P-14-2] Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlO_x

K. Arafune^1,5, S. Miki^1,5, R. Matsutani^1,5, J. Hamano^1,5, H. Yoshida^1,5, T. Tachibana^2,5, A. Ogura^2,5, K. Matsumoto³, K. Takahashi³, Y. Ohshita^4,5, S. Satoh^1,5 (1.Univ. of Hyogo, 2.Meiji Univ., 3.Tokyo Electron Ltd., 4.Toyota Technological Inst., 5.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.P-14-2

2011 International Conference on Solid State Devices and Materials

[P-14-2] Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlOx

[P-14-2] Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlO_x