Semi-Quantitative Determination of Radiative Recombination Centers in Silicon Power Devices by Cross-Sectional Cathodoluminescence

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

R. Sugie¹, K. Inoue¹, M. Yoshikawa¹ (1.Toray Research Center Inc. , Japan)