Semi-Quantitative Determination of Radiative Recombination Centers in Silicon Power Devices by Cross-Sectional Cathodoluminescence

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

R. Sugie¹、K. Inoue¹、M. Yoshikawa¹ (1.Toray Research Center Inc. , Japan)