Thinning Process Induced Surface Defects in Ultra-Thin Si Wafer

M. Murugesan; H. Nohira; C. Miyazaki; H. Shimamoto; H. Kobayashi; T. Fukushima; T. Tanaka; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.2011.P-2-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-2-2] Thinning Process Induced Surface Defects in Ultra-Thin Si Wafer

M. Murugesan¹、H. Nohira²、C. Miyazaki³、H. Shimamoto³、H. Kobayashi³、T. Fukushima¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ.、2.Tokyo City Univ.、3.ASET , Japan)

https://doi.org/10.7567/SSDM.2011.P-2-2

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