[P-3-17] Simulation of Electron Transport in Source and Drain Electrodes of Ultrathin Body III-V Channel MOSFETs

Y. Maegawa¹、S. Koba¹、H. Tsuchiya^1,2、M. Ogawa¹ (1.Kobe Univ.、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.P-3-17