[P-3-18] Evaluation of Drain Current Fluctuations of Si MOSFETs using BSIM3-like Current Model and TCAD A. Satoh1、T. Tada1、T. Kanayama1、S. Satoh2、H. Arimoto1 (1.AIST、2.Fujitsu Semiconductor Ltd. , Japan) https://doi.org/10.7567/SSDM.2011.P-3-18