[P-3-18] Evaluation of Drain Current Fluctuations of Si MOSFETs using BSIM3-like Current Model and TCAD

A. Satoh¹, T. Tada¹, T. Kanayama¹, S. Satoh², H. Arimoto¹ (1.AIST, 2.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.P-3-18