[P-3-19] Influence of Surface Roughness on Ge Gate-All-Around Nanowire nMOSFETs by 3D Full Band Monte Carlo Simulation

K. L. Wei¹, X. Y. Liu¹, G. Du¹ (1.Peking Univ. , China)

https://doi.org/10.7567/SSDM.2011.P-3-19