[P-4-11] Endurance enhancement of elevated-confined phase change random access memory

H. X. Yang^1,2、L. P. Shi¹、H. K. Lee¹、R. Zhao¹、T. C. Chong³ (1.A*STAR、2.National Univ. of Singapore、3.Singapore Univ. of Tech. and Design , Singapore)

https://doi.org/10.7567/SSDM.2011.P-4-11