[P-4-13L] Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites

Z. Zhang¹、E. J. Katz¹、D. Zeller²、G. Lucovsky²、L.F. Brillson¹ (1.Ohio State Univ.、2.North Carolina State Univ. , USA)

https://doi.org/10.7567/SSDM.2011.P-4-13L