[P-4-13L] Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites

Z. Zhang¹, E. J. Katz¹, D. Zeller², G. Lucovsky², L.F. Brillson¹ (1.Ohio State Univ., 2.North Carolina State Univ. , USA)

https://doi.org/10.7567/SSDM.2011.P-4-13L