Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO<sub>2</sub> based Resistive Switching Memory and its Mechanism for MLC Operation

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

J. H. Oh^1,2, K. C. Ryoo^1,2, S. Jung¹, Y. Park², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics Co., Ltd , Korea)