[P-4-5] Areal and Structural Effect on Oxide based RRAM cell for Improving Resistive Switching Characteristics

K. C. Ryoo^1,2、J. H. Oh^1,2、S. Jung¹、G. T. Jeong²、H. Jeong²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics. Co.,Ltd. , Korea)

https://doi.org/10.7567/SSDM.2011.P-4-5