Areal and Structural Effect on Oxide based RRAM cell for Improving Resistive Switching Characteristics

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. C. Ryoo^1,2, J. H. Oh^1,2, S. Jung¹, G. T. Jeong², H. Jeong², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics. Co.,Ltd. , Korea)