Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

U. Honda¹, Y. Yamada¹, Y. Tokuda¹, K. Shiojima² (1.Aichi Inst. of Tech., 2.Univ. of Fukui , Japan)