[P-6-11] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

U. Honda¹、Y. Yamada¹、Y. Tokuda¹、K. Shiojima² (1.Aichi Inst. of Tech.、2.Univ. of Fukui , Japan)

https://doi.org/10.7567/SSDM.2011.P-6-11