Plasma-Induced Damage of GaN and Its Recovery by Atomic Hydrogens at a Room Temperature

Y. Lu; S. Chen; R. Kometani; K. Takeda; H. Kondo; T. Egawa; K. Ishikawa; H. Amano; M. Sekine; M. Hori

doi:https://doi.org/10.7567/SSDM.2011.P-6-4

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-6-4] Plasma-Induced Damage of GaN and Its Recovery by Atomic Hydrogens at a Room Temperature

Y. Lu¹, S. Chen¹, R. Kometani¹, K. Takeda¹, H. Kondo¹, T. Egawa², K. Ishikawa¹, H. Amano¹, M. Sekine¹, M. Hori¹ (1.Nagoya Univ., 2.Nagoya Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2011.P-6-4

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