[P-7-17] Fabrication and Characterization of InGaAs/InAlAs Multiple FACQW Structures with Larger Tolerance to Impurity in Intrinsic Layer

Y. Amma¹、T. Arakawa¹ (1.Yokohama National Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-7-17