Characterization of GaGdN/AlGaN/GaGdN Triple-layer Structures with High Gd Concentration for Tunneling Magnetoresistance Devices

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. Higashi¹、D. Abe¹、Y. Mitsuno¹、S. Komori¹、S. Sano¹、S. Hasegawa¹、H. Asahi¹ (1.Osaka Univ. , Japan)