Characterization of GaGdN/AlGaN/GaGdN Triple-layer Structures with High Gd Concentration for Tunneling Magnetoresistance Devices

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. Higashi¹, D. Abe¹, Y. Mitsuno¹, S. Komori¹, S. Sano¹, S. Hasegawa¹, H. Asahi¹ (1.Osaka Univ. , Japan)