[P-8-7] Influence of Annealing Atmosphere on the Epitaxial Graphene Growth on 3C-SiC (111)/Si (111)

H. R. Aryal¹、K. Fujita¹、T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2011.P-8-7