[P-9-11] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs

Y. Harada¹、T. Kubo¹、T. Inoue¹、O. Kojima¹、T. Kita¹ (1.Kobe Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.P-9-11