Electron emission properties of GaAsN/GaAs quantum well containing N-related localized states: the influence of illuminance

M. C. Hsieh; J. F. Wang; K. H. Tseng; C. H. Chao; Y. C. Chi; R. C. C. Chen; C. H. Yang; Y. S. Wang; C. H. Chiang; J. F. Chen

doi:https://doi.org/10.7567/SSDM.2011.P-9-12

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-9-12] Electron emission properties of GaAsN/GaAs quantum well containing N-related localized states: the influence of illuminance

M. C. Hsieh¹, J. F. Wang¹, K. H. Tseng¹, C. H. Chao¹, Y. C. Chi¹, R. C. C. Chen¹, C. H. Yang¹, Y. S. Wang¹, C. H. Chiang¹, J. F. Chen¹ (1.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-9-12

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