[P-9-13] Electrical Characteristics and TDDB Reliability of ZrO₂/Al₂O₃/ZrO₂ Stack High-k Gate Dielectric

C. L. Lin¹、S. C. Wu¹、C. C. Tang¹、M. Y. Li² (1.Feng Chia Univ.、2.ProMOS Tech. Inc. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-9-13